8 biphase modulators and upconverters qpsk and qam modulators carrier driven modulation driven (linear if qam) (linear rf qpsk) (note 1) (note 2) frequency range carrier sideband phase/amp carrier model rf if rejection harmonics error (max.) sta tic loss/p 1 db rejection number (ghz) (ghz) (dbc) (dbc) ( deg./db) (db, max.) / (dbm) (dbc, t yp.) outlines notes sdm0502lc1q 0.5 C2 dc C 0.5 25 23 7 / 0.75 7 / +3 33 8 smt0502lc1 0.5 C 2 ttl n/a n/a 10 / 1.5 7 / +3 35 10 sm2737li6q 2.7 C 3.7 dc C 0.5 30 25 5 / 0.5 7 / +3 35 25 8 sdm0104lc1q 1 C 4 dc C 0.5 30 23 7 / 0.75 7 / +5 34 8 sdm0307li1q 3.4 C 6.4 dc C 0.3 30 25 5 / 0.5 7 / +6 35 21 8 smc0208li1q 1.5 C 6.5 dc C 0.5 30 25 7 / 0.75 10 / +16 35 21 8 sdm0607li3q 6 C 7 dc C 0.5 30 25 5 / 0.5 7 / +5 35 24 8 sdm6474lq 6.4 C 7.4 dc C 0.1 30 25 n/a n/a 35 26 sme0208li1q 2 C 8 dc C 0.5 20 30 7.5 / 0.75 10 / +6 25 21 8 sdm0708li3q 7.2 C 8.4 dc C 0.3 30 25 5 / 0.5 8 / +5 35 24 8 sml0711lm8q 7 C 11 dc C 0.5 50 24 n/a n/a n/a 27 lo = 1/2 rf sdm1015li3q 10 C 15 dc C 1 30 25 7 / 0.75 9 / +8 33 24 8 smt0218lc1 2 C 18 ttl n/a n/a 15 / 1.5 9 / +3 20 20 smc0618li1q 6 C18 dc C 0.5 30 25 12 / 1.25 9 / +16 33 21 8 sme0618li1q 6 C18 dc C 0.03 20 30 10 / 1.0 10 / +16 30 21 8 carrier driven modulation driven (linear if modulation ) (linear rf bpsk) (note 1) (note 2) frequency range carrier sideband phase/amp carrier model rf if rejection harmonics error (max.) sta tic loss/p 1 db rejection number (ghz) (ghz) (dbc) (dbc) ( deg./db) (db, max.) / (dbm) (dbc, t yp.) outlines notes bmt65175hc10 0.65 C 1.75 ttl na na 3 / 0.3 5 / +15 30 11 pin diodes bma0502la2 0.5 C 2 dc C 0.5 35 30 3 / 0.3 5 / +5 30 30 hermetic bma0104lw2 1 C 4 dc C 1 30 35 3 / 0.3 4 / +5 35 33 hermetic bma0208lw2 2 C 8 dc C 2 25 30 5 / 0.5 4 / +5 35 33 low 1/f schottky bma0218la1 2 C 18 dc C 0.5 15 20 10 / 0.75 5 / +5 20 1 low 1/f schottky BMT0218HC10 2 C 18 ttl n/a n/a 10 / 0.75 4 / +20 25 11 pin diodes bmt0218hr5 2 C 18 ttl n/a n/a 10 / 0.75 5 / +16 25 29 rhg equivalent bma0618la1 6 C 18 dc C 0.5 20 25 10 / 0.75 5 / +5 20 1 low 1/f schottky analog or digitally controlled inputs linear i/q or rf inputs f m f o f m f o f o f m f o f m f o f o i i q q f o f m f o f m bma linear biphase bmt digital biphase sdm, smc, sme linear, i/q qpsk bpsk smt digital, linear rf
ssb upconverters and vector modulators/phase shifters 9 carrier driven modulation driven (linear if qam) (linear rf pm) frequency range (note 1) (note 2) rf if carrier sideband carrier sideband conversion model in and out (ghz) rejection rejection rejection rejection loss number (ghz) (note 3) (dbc) (dbc) (dbc) (t yp./min.) (typ./max.) outlines notes sdm0501lc1 0.5 C 1 dc C 0.5 25 18 33 25 / 15 8 / 10 8 sdm0502lc1 0.5 C 2 dc C 0.5 25 18 33 25 / 15 8 / 10 8 sdm0102lc1 1 C 2 dc C 0.5 25 20 35 25 / 15 8 / 10 8 sdm0104lc1 1 C 4 dc C 0.5 30 20 34 25 / 15 8 / 10 8 sme0104li1 1 C 4 dc C 0.5 30 30 35 35 / 27 10 / 12 22 8 sdm0204lc1 2 C 4 dc C 0.5 30 20 35 20 / 18 8 / 10 8 sm0208lc2 2 C 8 dc C 0.5 20 20 25 20 / 18 9 / 11 13 sme0208li1 2 C 8 dc C 0.5 20 30 25 35 / 27 11 / 13 22 8 smc0208li1 2 C 8 dc C 0.5 30 25 35 25 / 23 7 / 10 21 sm0408lc2 4 C 8 dc C 0.5 25 24 30 24 / 20 6 / 9 13 sm0812lc2 8 C 12 dc C 0.5 25 23 30 23 / 20 6 / 9 13 sm0218lc1 2 C 18 dc C 0.5 12 18 25 18 / 15 9.5 / 11 9 sm0618lc2 6 C 18 dc C 0.5 12 18 25 20 / 18 8 / 9 13 sme0618hi1 6 C 18 dc C 0.5 n/a n/a 25 28 / 25 10 / 13 22 pin diodes, 8 sme0618li1 6 C 18 dc C 0.5 20 28 25 28 / 25 10 / 13 22 schottky diodes, 8 sml0618lc2 6 C 18 dc C 1 40 23 n/a n/a n/a 13 lo = 1/2 rf sm1218lc2 12 C 18 dc C 1 15 15 20 23 / 20 7 / 9 13 sm0226lc1 2 C 26 dc C 0.5 15 15 20 18 /15 12 / 15 9 sme0618li1avc 6 C 18 dc C .01 n/a n/a 30 30 / 25 12 / 15 * analog phase/vector sme0618li1diq 6 C 18 ttl n/a n/a 30 30 / 25 10 / 13 * digital phase/vector * contact factory for outline drawings. general all modulators and ssb upconverters require that at least one of the input frequency bands (carrier or modulation) has sufficie nt power to turn on the semiconductors used in the various designs (i.e., schottky diodes or pin diodes). all modulators yield a frequency spectrum that utilizes both sidebands on either side of the output suppressed carrier. ssb upconverters employ an internal if 90 degree hybrid to yield only 1 rf side band output. this is offset above or below the input lo by the if frequency (test data is recorded for the upper sideband only). schottky diode (stan dard) modulators have the greatest speed and bandwidths, but yield rf output powers of typically less than 0 dbm. pin diode (optional) designs can onl y be driven at modulation rates of less than 30 mhz, but will yield output rf powers exceeding +5 dbm. pin or schottky modulators that vary onl y the rf carrier phase, in many discrete steps or continuously, are referred to as phase shifters or frequency translators respectively. when out put rf amplitude and phase control is required, the device is usually called a vector modulator. for the latter device, phase accuracy is usually spe cified over a given amplitude range (in db). all miteq modulators can be driven in the carrier or modulation modes as explained below, but test data is only recorded in the modulation driven mode. section 3 notes note 1: carrier driven: lo = +13 dbm, i/q = 0 dbm. used when any amplitude variation or pulse shape of the modulation must be accu rately transferred to the rf output envelope. a communication example would be directly modulating a microwave carrier with gaussian sh aped i/q digital pulses to minimize the channel bandwidth required. note 2: modulation driven: rf = 0 dbm, i/q = +10 dbm or 10 ma or ttl. used when rf input has wide dynamic range, such as for mili tary and commercial doppler frequency shift generation or corrections. if desired, the harmonic distortion of the relatively fixed and hi gher level i/q drive third order harmonics can be linearized by resistance/diode or digital rom wave shaping techniques. the latter is often u sed in vector modulator applications, such as in the model sme0618li1diq design. note 3: to specify the if frequency for ssb upconverter usage, select from the following standard options and add to end of mode l number or contact miteq: suffix a: 20C40 mhz, suffix b: 40C80 mhz, suffix c: 100C200 mhz, suffix d: 500C1000 mhz, suffix q: i/q inputs note 4: conversion loss (cl) is relative to lowest power input (f o , f m ). all other outputs (including f o , are relative to the desired upper (f o + f m ) output. note 5: standard units with if hybrids are aligned for upper sideband operation. for lower sideband or selectable sideband, conta ct miteq. note 6: last two characters in model number indicate standard outline number, see outline section. note 7: question and answer modulator application notes available, contact factory. note 8: hermetically sealed housing. ssb upconverters with internal if hybrids analog or digitally controlled vector modulators/phase shifters f m f o f m f o rom d/a rom d/a sdm, sml-a...d single-sideband upconverter lo and 1/2 lo smc, sme...avc/diq analog/digital, phase/amp control mpsk
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